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| SD8250 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .REFRACTORY/ .EMI .5: .LOW .I .OVERLAY .METAL/ .P DESCRIPTION G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE THERMAL RESISTANCE N PUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 250 W MIN. WITH 8.0 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE SD8250 BRANDING STAN250A PIN CONNECTION The SD8250 is a high power Class C transistor specifically designed for TACAN/DME pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF overdrive. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The SD8250 is supplied in the AMPACTM Hermetic Metal/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC 90C) 575 20 55 250 - 65 to +200 W A V C C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance(1) 0.28 C/W *Applies only to rated RF amplifier operation (1) Infra-Red Scan of Hot Spot Junction Temperature at Rated RF Operating Conditions July 19, 1994 1/5 SD8250 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Test Conditions Valu e Min. Typ. Max. Unit BVCBO BVEBO BVCES ICES hFE DYNAMIC Symbol IC = 35mA IE = 15mA IC = 25mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA IB = 0mA VCE = 50V IC = 1A 65 4.0 60 -- 10 -- -- -- -- -- -- -- -- 20 -- V V V mA -- Test Conditions Value Min. Typ. Max. Unit POUT c PG Note: f = 960 -- 1215 MHz PIN = 40 W f = 960 -- 1215 MHz PIN = 40 W f = 960 -- 1215 MHz PIN = 40 W = = = 20Sec 5% 25C VCC = 50 V VCC = 50 V VCC = 50 V 250 38 8.0 295 44 8.7 -- -- -- W % dB Pul se Widt h Duty Cycle TC TYPICAL PERFORMANCE TYPICAL BROADBAND I N P U T 5.1 TYPICAL BROADBAND POWER POWER AMPLIFIER AMPLIFIER 400 100 INPUT VSWR vs FREQUENCY POUT P O W E R O U T P U T W A T T S 100 150 200 60 250 300 350 PIN = 40W 90 C O L I N S P W U R T V 3.1 . PIN = 32W 80 L E C PIN = 25W C 70 T O R E F V S W R 1.1 960 1090 FREQUENCY (MHz) 1215 . PIN = 40W PIN 50 F . = 32W 40 PIN = 25W % 50 960 1090 FREQUENCY (MHz) 1215 30 2/5 SD8250 TYPICAL PERFORMANCE (cont'd) TYPICAL RELATIVE OUTPUT TYPICAL POWER OUTPUT & COLLEC& COLLECTOR TOR EFFICIENCY COLLECTOR VOLTAGE EFFICIENCY vs vs COLLECTOR VOLTAGE 100 90 80 70 60 50 40 30 20 10 0 30 35 40 45 50 80 P O W E R O U T P U T W A T T S POUT 70 C O L L E 60 C T O R C 50 E F F . 40 % 30 COLLECTOR VOLTAGE (VOLTS) IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN ZIN L H TYPICAL COLLECTOR LOAD IMPEDANCE ZCL M H L ZCL M FREQ. L = 960 MHz M = 1090 MHz H =1215 MHz ZIN () 1.0 + j 3.5 4.0 + j 3.5 2.2 + j 2.2 Z CL () 1.9 - j 1.8 1.6 - j 0.9 1.4 - j 1.1 PIN = 40 W VCC = 50 V Normalized to 50 ohms 3/5 SD8250 TEST CIRCUIT All dimensions are in inches. Substrate material: .025 thick AI2O3 C1 C2 C3 C4 : : : : 100 F Electrolytic Capacitor, 63V .1 F Ceramic Capacitor Feedthru Bypass SCI 712-022 Johanson 7475 Gigatrim .6 -- 4.5 pF C5 C6 L1 L2 : : : : Johanson 7475 Gigatrim .6 -- 4.5 pF D.C. Block 100 pF #26 Wire, 4 Turn .062 I.D. #26 Wire, 4 Turn .062 I.D. 4/5 SD8250 PACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0222 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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